Dongho Cha received the B.S. degree in Physics from Sungkyunkwan University, Korea in 1990 and the M.S. degree in Physics from Pohang University of Science and Technology (POSTECH), Korea in 1995. From 1995 to 2002, he worked for Samsung Electronics. Since 2002, he has worked in the Device Research Laboratory group in Electrical Engineering at University of California, Los Angeles under the direction of Professor Kang L. Wang for a Ph.D. degree.
RESEARCH INTERESTS:
MBE, Quantum dots, Photo detectors, Nanoelectronics, and Optoelectronics
PUBLICATIONS AND PRESENTATIONS:
Dongho Cha, Masaaki Ogawa, Seongku Kim, Xinhai Han, Kang L. Wang, Hyungjun Kim, Jiayu Wang and Thomas P. Russell, “Strain and composition of Ge quantum dots on nano-patterns made by a self-assembled diblock copolymer.” Appl. Phys. Lett. To be submitted.
Dongho Cha, Masaaki Ogawa, Christopher Chen, Seongku Kim, Jooyoung Lee and Kang L. Wang, Jiayu Wang and Thomas P. Russell, “Intersubband absorption in p-type Si1-xGex quantum dots on pre-patterned Si substrates made by diblock copolymer process.” Journal of Crystal Growth. Accepted.
Masaaki Ogawa, Dongho Cha, Jooyoung Lee and Kang L. Wang, Jiayu Wang and Thomas P. Russell, “Dosage dependence of Ge quantum dots grown on carbon-implanted Si substrates.” Journal of Crystal Growth. Accepted.
Christopher Chen, Dongho Cha, Joo-young Lee, Hyung-jun Kim, Fei Liu, Song Tong, Kang L. Wang, Jia-Yu Wang1, and Thomas P. Russell, “Nano-patterned Growth of Ge Quantum Dots for Infrared Detector Applications.” Mater. Res. Soc. Symp. Proc. Vol. 891, 0891-EE06-01.1 (2006).
D. Cha, M. Ogawa, C. Chen, J. Lee and L. Wang, “Intersubband absorption in p-type Si1-xGex quantum dots on pre-patterned Si substrates made by diblock copolymer process,” presented in 14th International Conference on Molecular Beam Epitaxy, Tokyo, Japan, September 3-8, 2006.
M. Ogawa, D. Cha, J. Lee and K. Wang, “Dosage dependence of Ge quantum dots grown on carbon-implanted Si substrate,” presented in 14th International Conference on Molecular Beam Epitaxy, Tokyo, Japan, September 3-8, 2006.
Masaaki Ogawa, Hyung-jun Kim, Joo-young Lee, Dong-ho Cha, and Kang L. Wang, “Growth temperature dependence of Ge quantum dots grown on carbon-implanted Si substrates,” presented in TNT (Trends in Nanotechnology), Oviedo, Spain, August 29 – September 2, 2005.
Joo-Young Lee, H. J. Kim, Dongho Cha, Filipp Baron and Kang L. Wang, “Size Dependent Hall Mobility in a High Germanium Content Si0.1Ge0.9 Alloy Layer for MODFET Structure Grown by MBE,” presented in MRS 2005 Spring meeting, San Francisco, California, March 28 – April 1, 2005.
I. S. Kim, J.H. Lee, D.H. Cha, J. S. Park, H. K. Cho, J. T. Moon, "Challenge to 0.13um device patterning using KrF", SPIE vol. 3679(1999), p872 - 881.
D. H. Cha, "Challenge to 130nm Device Patterning using KrF", 10th Annual Users' Group Meeting Nov/'99, 5th presentation (San Diego, CA)
Dong-Eon Kim, Dong-Ho Cha, and Sang-Won Lee, "Optimized structures of multi-layer soft x-ray reflectors in the spectral range of 30 to 300 A ", Japanese Journal of Applied Physics, 37, 2728, 1998.
Dong-Ho Cha, Jong-Wook Kye, Nak-Geuon Seong, Ho-Young Kang, Han-Ku Cho, Joo-Tae Moon, "Evaluation of phase-edge phase-shifting mask for sub-0.18um gate patterns in logic devices", SPIE vol. 3334(1998), p46 – 54.
D. Cha, J. Kye, N. Seong, H. Kang, H. Cho, and J. Moon, "PATTERNING OF SUB-0.18um LOGIC GATES WITH PHASE-EDGE PSM", Microprocesses and Nanotechnology '98, Digest of Papers p106 - 108.
Dong-Ho Cha, "PHASE-EDGE PSM TECHNOLOGY FOR SUB 0.18UM LOGIC GATES", SEMICON Korea Technical Symposium 98, Process & Evaluation Technology I, II, p123 -132.
Dong-Eon Kim, Dong-Ho Cha, and Sang-Won Lee, "Structural characterization of a Mo/Si multi-layer reflector by means of x-ray diffraction measurements", J. Vac. Sci. Technol. A 15(4), Jul/Aug 1997, p2291 - p2296.
H.Kim, J.Hong, J.Kye, D.Cha, H.Kang, J.Moon, "Defect inspection and printability of deep UV halftone phase-shifting mask", SPIE vol. 3236(1997).
Dong-Eon Kim, Sang-Won Lee, Dong-Ho Cha, "Search for optimum structural parameters of soft x-ray reflectors", Proceedings on the 5th International Colloquium on X-ray Lasers, Lund, Sweden, 1996.
