DRL | 2013
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  1. Zhang, J.-M., Ming, W., Huang, Z., Liu, G.-B., Kou, X., Fan, Y., Wang, K.L., and Yao, Y., Stability, Electronics, and Magnetic Properties of the Magnetically Doped Topological Insulators Bi2Se3, Bi2Te3, and Sb2Te3, Physical Review B, 88 (23): 235131: 1-9. (December 30, 2013)
  2. Upadhyaya, P., Dusad, R., Hoffman, S., Tserkovnyak, Y., Alzate, J.G., Amiri, P.K., and Wang, K.L.,Electric Field Induced Domain-Wall Dynamics: Depinning and Chirality Switching, Selected as Editors’ Suggestion in Physical Review B, 88 (22): 224422/1-6. (December 26, 2013)
  3. Chu, C., Arafin, S., Nie, T., Yao, K., Kou, X., He, L., Wang, C.-Y., Chen, S.-Y., Chen, L.-J., Qasim, S.M., BenSaleh, M.S., and Wang, K.L., Nanoscale Growth of GaAs on Patterned Si (111) Substrates by Molecular Beam Epitaxy, Crystal Growth and Design, 14 (2): 593-598. (December 16, 2013)
  4. He, L., Kou, X., Lang, M., Choi, E.S., Jiang, Y., Nie, T., Jiang, W., Fan, Y., Wang, Y., Xiu, F., and Wang, K.L., Evidence of the Two Surface States of (Bi53SB0.47)2Te3 Films Grown by Van der Waals Epitaxy, Scientific Reports, 3: 3406/1-6. (December 3, 2013)
  5. Fischer, I.A., Gebauer, J., Rolseth, E., Winkel, P., Chang, L.-T., Wang, K.L., Surges, C., and Schulze, J., Ferromagnetic Mn5Ge3C8 Contacts on Ge: Work Function and Specific Contact Resistivity, Semiconductor Science and Technology, 28 (12): 125002/1-5. (October 24, 2013)
  6. Li, X., Yang, G, Torres, C.M., Zheng, D., and Wang, K.L., A Class of Efficient Quantum Incrementer Gates for Quantum Circuit Synthesis, International Journal of Modern Physics B, 28 (01): 1350191/1-15. (October 17, 2013).
  7. Kou, X., Lang, M., Fan, Y., Jiang, Y., Nie, T., Zhang, J., Jiang, W., Wang, Y., Yao, Y., He, L., and Wang, K.L., Interplay between Different Magnetisms in Cr-Doped Topological Insulators, ACS Nano, 7 (10): 9205-9212. (September 26, 2013)
  8. Kou, X., He, L., Lang, M., Fan, Y., Wong, K., Jiang, Y., Nie, T., Jiang, W., Upadhyaya, P., Xing, Z., Wang, Y., Xiu, F., Schwartz, R.N., and Wang, K.L., Manipulating Surface–Related Ferromagnetism in Modulation-Doped Topological Insulators, Nano Letters, 13 (10): 4587-4593. (September 10, 2013)
  9. Tang, J., Wang, C.-Y., Chang, L.-T., Fan, Y., Nie, T., Chan, M., Jiang, W., Chen, Y.-T., Yang, H.-J., Tuan, H.-Y., Chen, L.-J., and Wang, K.L., Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors, Nano Letters, 13 (9): 4036-4043. (August 12, 2013)
  10. Poljak, M., Suligoj, T., and Wang, K., Influence of Substrate Type and Quality on Carrier Mobility in Graphene Nanoribbons, Journal of Applied Physics, 114 (5): 053701/1-8. (August 1, 2013)
  11. Wang, K., Liu, Y., Wang, W., Meyer, N., Bao, L.H., He, L., Lang, M.R., Chen, Z.G., Che, X.Y., Post, K., Zou, J., Basov, D.N., Wang, K.L., and Xiu, F., High-Quality Bi2Te3 Thin Films Grown on Mica Substrates for Potential Optoelectronic Applications, Applied Physics Letters, 103 (3): 031605/1-4. (July 17, 2013)
  12. Jiang, Y., Wang, Y., Sagendorf, J., West, D., Kou, X., Wei, X., He, L., Wang, K.L., Zhang, S., and Zhang, Z., Direct Atom-by-Atom Chemical Identification of Nanostructures and Defects of Topological Insulators, Nano Letters, 13 (6): 2851-2856. (May 28, 2013)
  13. Zeng, C., Song, E.B., Wang, M., Lee, S., Torres, C.M.Jr., Tang, J., Weiller, B.H., and Wang, K.L., Vertical Graphene-Base Hot-Electron Transistor, Nano Letters, 13 (6): 2370-2375. (May 14, 2013)
  14. Dorrance, R., Alzate, J.G., Cherepov, S.S., Upadhyaya, P., Krivorotov, I.N., Katine, J.A., Langer, J., Wang, K.L., Khalili Amiri, P., and Markovic, D., Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM, IEEE Electron Device Letters, 34 (6): 753-755. (May 3, 2013)
  15. Jiang, W., Upadhyaya, P., Fan, Y., Zhao, J., Wang, M., Chang, L.-T., Lang, M., Wong, K.L., Lewis, M., Lin, Y.-T., Tang, J., Cherepov, S., Zhou, X., Tserkovnyak, Y., Schwartz, R.N., and Wang, K.L., Direct Imaging of Thermally Driven Domain Wall Motion in Magnetic Insulators, Physical Review Letters, 110 (17): 177202/1-5. (April 22, 2013)
  16. Zeng, Z., Finocchio, G., Zhang, B., Khalili Amiri, P., Katine, J.A., Krivorotov, I.N., Huai, Y., Langer, J., Azzerboni, B., Wang, K.L., and Jiang, H., Ultralow-Current-Density and Bias-Field-Free Spin-Tranfer Nano-Oscillator, Scientific Reports, 3: 1426/1-5. (March 12, 2013)
  17. Lee, S., Lee, Y., Song, E.B., Wang, K.L., and Hiramoto, T., Gate-Tunable Selective Operation of Single Electron/Hole Transistor Modes in a Silicon Single Quantum Dot at Room Temperature, Applied Physics Letters, 102 (8): 083504/1-4. (February 25, 2013)
  18. He, L., Kou, X., and Wang, K.L., Review of 3D Topological Insulator Thin-Film Growth by Molecular Beam Epitaxy and Potential Applications, Physica Status Solidi, 7 (1-2): 50-63. (January 31, 2013)
  19. Wang, K.L., Alzate, J.G., Khalili Amiri, P., Low-Power Non-Volatile Spintronic Memory: STT-RAM and Beyond, Journal of Physics D: Applied Physics, 46 (7): 074003/1-10. (January 31, 2013)
  20. Jiang, W., Fan, Y., Upadhyaya, P., Lang, M., Wang, M., Chang, L.-T., Wong, K.L., Tang, J., Lewis, M., Zhao, J., He, L., Kou, X., Zeng, C., Zhou, X.Z., Schwartz, R.N., and Wang, K.L., Mapping the Domain Wall Pinning Profile by Stochastic Imaging Reconstruction, Physical Review B, 87 (1): 014427/1-7. (January 25, 2013)
  21. Xu, K., Zeng, C., Zhang, Q., Yan, R., Ye, P., Wang, K., Seabaugh, A.C., Xing, H.G., Suehle, J.S., Richter, C.A., Gundlach, D.J., and Nguyen, N.V., Direct Measurement of Dirac Point Energy at the Graphene/Oxide Interface, Nano Letters, 13 (1): 131-136. (January 9, 2013)
  22. Khalili Amiri, P., Upadhyaya, P., Alzate, J.G., and Wang, K.L., Electric-Field-Induced Thermally Assisted Switching of Monodomain Magnetic Bits, Journal of Applied Physics, 113 (1): 013912/1-5. (January 7, 2013)
  23. Balendhran, S., Deng, J., Ou, J.Z., Walia, S., Scott, J., Tang, J., Wang, K.L., Field, M.R., Russo, S., Zhuiykov, S., Strano, M.S., Medhekar, N., Sriram, S., Bhaskaran, M., and Kalantar-zadeh, K., Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide, Advanced Materials, 25 (1): 109-114. (January 4, 2013)
  24. Chang, L.-T., Han, W., Zhou, Y., Tang, J., Fischer, I.A., Oehme, M., Schulze, J., Kawakami, R.K., and Wang, K.L., Comparison of Spin Lifetimes in n-Ge Characterized Between Three-Terminal and Four-Terminal Nonlocal Hanle Measurements, Semiconductor Science and Technology, 28 (1): 015018/1-7. (January 2013)
  25. Poljak, M., Wang, M., Song, E.B., Suligoj, T., and Wang, K.L., Disorder-Induced Variability of Transport Properties of sub-5 nm-wide Graphene Nanoribbons, Solid-State Electronics, 84: 103-111. (June 2013)