2013

2013 PUBLICATIONS

• Zhang, J.-M., Ming, W., Huang, Z., Liu, G.-B., Kou, X., Fan, Y., Wang, K.L., and Yao, Y., “Stability, Electronics, and Magnetic Properties of the Magnetically Doped Topological Insulators Bi₂Se₃, Bi₂Te₃, and Sb₂Te₃”, Physical Review B, 88 (23): 235131: 1-9. (December 30, 2013)
• Upadhyaya, P., Dusad, R., Hoffman, S., Tserkovnyak, Y., Alzate, J.G., Amiri, P.K., and Wang, K.L., “Electric Field Induced Domain-Wall Dynamics: Depinning and Chirality Switching”, Selected as Editors’ Suggestion in Physical Review B, 88 (22): 224422/1-6. (December 26, 2013)
• Chu, C., Arafin, S., Nie, T., Yao, K., Kou, X., He, L., Wang, C.-Y., Chen, S.-Y., Chen, L.-J., Qasim, S.M., BenSaleh, M.S., and Wang, K.L., “Nanoscale Growth of GaAs on Patterned Si (111) Substrates by Molecular Beam Epitaxy”, Crystal Growth and Design, 14 (2): 593-598. (December 16, 2013)
• He, L., Kou, X., Lang, M., Choi, E.S., Jiang, Y., Nie, T., Jiang, W., Fan, Y., Wang, Y., Xiu, F., and Wang, K.L., “Evidence of the Two Surface States of (Bi₅₃SB_0.47)₂Te₃ Films Grown by Van der Waals Epitaxy”, Scientific Reports, 3: 3406/1-6. (December 3, 2013)
• Fischer, I.A., Gebauer, J., Rolseth, E., Winkel, P., Chang, L.-T., Wang, K.L., Surges, C., and Schulze, J., “Ferromagnetic Mn₅Ge₃C₈ Contacts on Ge: Work Function and Specific Contact Resistivity”, Semiconductor Science and Technology, 28 (12): 125002/1-5. (October 24, 2013)
• Li, X., Yang, G, Torres, C.M., Zheng, D., and Wang, K.L., “A Class of Efficient Quantum Incrementer Gates for Quantum Circuit Synthesis”, International Journal of Modern Physics B, 28 (01): 1350191/1-15. (October 17, 2013).
• Kou, X., Lang, M., Fan, Y., Jiang, Y., Nie, T., Zhang, J., Jiang, W., Wang, Y., Yao, Y., He, L., and Wang, K.L., “Interplay between Different Magnetisms in Cr-Doped Topological Insulators”, ACS Nano, 7 (10): 9205-9212. (September 26, 2013)
• Kou, X., He, L., Lang, M., Fan, Y., Wong, K., Jiang, Y., Nie, T., Jiang, W., Upadhyaya, P., Xing, Z., Wang, Y., Xiu, F., Schwartz, R.N., and Wang, K.L., “Manipulating Surface–Related Ferromagnetism in Modulation-Doped Topological Insulators”, Nano Letters, 13 (10): 4587-4593. (September 10, 2013)
• Tang, J., Wang, C.-Y., Chang, L.-T., Fan, Y., Nie, T., Chan, M., Jiang, W., Chen, Y.-T., Yang, H.-J., Tuan, H.-Y., Chen, L.-J., and Wang, K.L., “Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors”, Nano Letters, 13 (9): 4036-4043. (August 12, 2013)
• Poljak, M., Suligoj, T., and Wang, K., “Influence of Substrate Type and Quality on Carrier Mobility in Graphene Nanoribbons”, Journal of Applied Physics, 114 (5): 053701/1-8. (August 1, 2013)
• Wang, K., Liu, Y., Wang, W., Meyer, N., Bao, L.H., He, L., Lang, M.R., Chen, Z.G., Che, X.Y., Post, K., Zou, J., Basov, D.N., Wang, K.L., and Xiu, F., “High-Quality Bi₂Te₃ Thin Films Grown on Mica Substrates for Potential Optoelectronic Applications”, Applied Physics Letters, 103 (3): 031605/1-4. (July 17, 2013)
• Jiang, Y., Wang, Y., Sagendorf, J., West, D., Kou, X., Wei, X., He, L., Wang, K.L., Zhang, S., and Zhang, Z., “Direct Atom-by-Atom Chemical Identification of Nanostructures and Defects of Topological Insulators”, Nano Letters, 13 (6): 2851-2856. (May 28, 2013)
• Zeng, C., Song, E.B., Wang, M., Lee, S., Torres, C.M.Jr., Tang, J., Weiller, B.H., and Wang, K.L., “Vertical Graphene-Base Hot-Electron Transistor”, Nano Letters, 13 (6): 2370-2375. (May 14, 2013)
• Dorrance, R., Alzate, J.G., Cherepov, S.S., Upadhyaya, P., Krivorotov, I.N., Katine, J.A., Langer, J., Wang, K.L., Khalili Amiri, P., and Markovic, D., “Diode-MTJ Crossbar Memory Cell Using Voltage-Induced Unipolar Switching for High-Density MRAM”, IEEE Electron Device Letters, 34 (6): 753-755. (May 3, 2013)
• Jiang, W., Upadhyaya, P., Fan, Y., Zhao, J., Wang, M., Chang, L.-T., Lang, M., Wong, K.L., Lewis, M., Lin, Y.-T., Tang, J., Cherepov, S., Zhou, X., Tserkovnyak, Y., Schwartz, R.N., and Wang, K.L., “Direct Imaging of Thermally Driven Domain Wall Motion in Magnetic Insulators”, Physical Review Letters, 110 (17): 177202/1-5. (April 22, 2013)
• Zeng, Z., Finocchio, G., Zhang, B., Khalili Amiri, P., Katine, J.A., Krivorotov, I.N., Huai, Y., Langer, J., Azzerboni, B., Wang, K.L., and Jiang, H., “Ultralow-Current-Density and Bias-Field-Free Spin-Tranfer Nano-Oscillator”, Scientific Reports, 3: 1426/1-5. (March 12, 2013)
• Lee, S., Lee, Y., Song, E.B., Wang, K.L., and Hiramoto, T., “Gate-Tunable Selective Operation of Single Electron/Hole Transistor Modes in a Silicon Single Quantum Dot at Room Temperature”, Applied Physics Letters, 102 (8): 083504/1-4. (February 25, 2013)
• He, L., Kou, X., and Wang, K.L., “Review of 3D Topological Insulator Thin-Film Growth by Molecular Beam Epitaxy and Potential Applications”, Physica Status Solidi, 7 (1-2): 50-63. (January 31, 2013)
• Wang, K.L., Alzate, J.G., Khalili Amiri, P., “Low-Power Non-Volatile Spintronic Memory: STT-RAM and Beyond”, Journal of Physics D: Applied Physics, 46 (7): 074003/1-10. (January 31, 2013)
• Jiang, W., Fan, Y., Upadhyaya, P., Lang, M., Wang, M., Chang, L.-T., Wong, K.L., Tang, J., Lewis, M., Zhao, J., He, L., Kou, X., Zeng, C., Zhou, X.Z., Schwartz, R.N., and Wang, K.L., “Mapping the Domain Wall Pinning Profile by Stochastic Imaging Reconstruction”, Physical Review B, 87 (1): 014427/1-7. (January 25, 2013)
• Xu, K., Zeng, C., Zhang, Q., Yan, R., Ye, P., Wang, K., Seabaugh, A.C., Xing, H.G., Suehle, J.S., Richter, C.A., Gundlach, D.J., and Nguyen, N.V., “Direct Measurement of Dirac Point Energy at the Graphene/Oxide Interface”, Nano Letters, 13 (1): 131-136. (January 9, 2013)
• Khalili Amiri, P., Upadhyaya, P., Alzate, J.G., and Wang, K.L., “Electric-Field-Induced Thermally Assisted Switching of Monodomain Magnetic Bits”, Journal of Applied Physics, 113 (1): 013912/1-5. (January 7, 2013)
• Balendhran, S., Deng, J., Ou, J.Z., Walia, S., Scott, J., Tang, J., Wang, K.L., Field, M.R., Russo, S., Zhuiykov, S., Strano, M.S., Medhekar, N., Sriram, S., Bhaskaran, M., and Kalantar-zadeh, K., “Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide”, Advanced Materials, 25 (1): 109-114. (January 4, 2013)
• Chang, L.-T., Han, W., Zhou, Y., Tang, J., Fischer, I.A., Oehme, M., Schulze, J., Kawakami, R.K., and Wang, K.L., “Comparison of Spin Lifetimes in n-Ge Characterized Between Three-Terminal and Four-Terminal Nonlocal Hanle Measurements”, Semiconductor Science and Technology, 28 (1): 015018/1-7. (January 2013)
• Poljak, M., Wang, M., Song, E.B., Suligoj, T., and Wang, K.L., “Disorder-Induced Variability of Transport Properties of sub-5 nm-wide Graphene Nanoribbons”, Solid-State Electronics, 84: 103-111. (June 2013)