Professor Kang L. Wang received his BS (1964) degree from National Cheng Kung University and his MS (1966) and PhD (1970) degrees from the Massachusetts Institute of Technology. In 1970 to 1972 he was the Assistant Professor at MIT. From 1972 to 1979, he worked at the General Electric Corporate Research and Development Center as a physicist/engineer. In 1979 he joined the Electrical Engineering Department of the University of California, Los Angeles (UCLA), where he is a Professor and leads the Device Research Laboratory (DRL). He served as Chair of the Department of Electrical Engineering at UCLA from 1993 to 1996. His research activities include semiconductor nano devices, and nanotechnology; self-assembly growth of quantum structures and cooperative assembly of quantum dot arrays Si-based Molecular Beam Epitaxy, quantum structures and devices; Nano-epitaxy of hetero-structures; Spintronics materials and devices; Electron spin and coherence properties of SiGe and InAs quantum structures for implementation of spin-based quantum information; microwave devices. He was the inventor of strained layer MOSFET, quantum SRAM cell, and band-aligned superlattices. He has held more than 45 patents and published over 700 papers. He received many awards, including IBM Faculty Award; Guggenheim Fellow; IEEE Fellow; TSMC Honor Lectureship Award; Honoris Causa at Politechnico University, Torino, Italy; Semiconductor Research Corporation Inventor Awards; European Material Research Society Meeting Best paper award; the Semiconductor Research Corporation Technical Excellence Achievement Award.